CSF法による単結晶シリコンの破壊靭性値評価における基礎検討

抄録

This paper provides effects of removal amount of surface with crack introduced by indenter on the fracture toughness for the single crystal silicon wafer. Removing the residual stress should be required in CSF method for evaluation of the fracture toughness in brittle materials. It attempts to clarify the effects on the fracture toughness by using ion shower which can control the removal amount of the surface with micro crack.

Fracture toughness of cleavage plane of single crystal silicon was evaluated by CSF method. Effects of removal amount of the surface and crack shapes on the fracture toughness were evaluated experimentally by using ion shower. The validity of the fracture toughness value for each indentation load was considered by comparison of both results of CSF and IF methods. An appropriate amount of surface removed was proposed for evaluating the fracture toughness.