構造化照明による照明パターンとラマンスペクトル評価

抄録

In recent years, higher performance and higher reliability of power devices have been required. Therefore, it is necessary to develop a technique to evaluate the strain field in micro-order regions of power devices. In our laboratory, polarized Raman spectroscopy with a multi-point simultaneous spectroscopy system has been developed in order to measure stress and strain in several 10 μm square region, but the spatial resolution was reduced. In this study, the structured illumination method was applied to the Raman spectroscopic imaging system. In this method, a stripe illumination with a periodic intensity distribution was formed by laser light through diffraction optical elements (DOE). An interval between the bounds of the interference was good agreement with theoretical value. We detected Raman scattered light of (111) silicon irradiated by stripe laser light.