The Proceedings of The Manufacturing & Machine Tool Conference
Online ISSN : 2424-3094
2001.3
Session ID : 421
Conference information
421 Chemical mechanical polishing of Cu surface with Mn oxide slurries
Kenji SHIMIZUYoshio ICHIDAYoshitaka MORIMOTORyunosuke SATO
Author information
CONFERENCE PROCEEDINGS FREE ACCESS

Details
Abstract
To examine the polishing characteristics of the Mn oxide slurry, in which abrasive grain itself is oxidizing agent, Chemical Mechanical Polishing (CMP) of copper surfaces has been carried out by using Mn_2O_3, MnO_2 and Al_2O_3 as an abrasive grain. As a result of comparison from the viewpoint of the stock removal and surface roughness, the best result is obtained in Mn_2O_3 slurry. Furthermore polished surfaces have been analyzed by means of Atomic Force Microscope (AFM). While many mechanical scratches are observed in the polished surface with Al_2O_3 slurry, the surface with Mn oxide slurry is covered with fine protrusions. It seems that the fine protrusions result from interaction between mechanical and chemical effects.
Content from these authors
© 2001 The Japan Society of Mechanical Engineers
Previous article Next article
feedback
Top