抄録
This paper describes results of polishing experiment of the silicon wafer with used a newly developed abrasive tools. At first, in production of the abrasive tool, SiO_2 grains were fixed on aluminum substrate by anodic spark deposition method. An amorphous Si layer was plated on the SiO_2 grains by PECVD method. In polishing experiment, thickness and surface roughness of an amorphous Si compounds, surface roughness and polishing rate of silicon wafer were examined. As a result an amorphous Si compounds seems to have processing with a few scratches than a SiO_2 film. And an amorphous Si compounds seems to have the enough durability as an abrasive tool.
