抄録
A simple process to fabricate three dimensional microstructures on single crystal silicon is presented in this study. The area irradiated by focused ion beam (FIB) can be selectively etched in HF solution. Etching characteristics of irradiated area are studied. The etch rate of irradiated area increases with increasing dose over 3.4×10^<-5>C/cm^2. In addition, it can be also controlled by accelerate voltage. Finally, 3 dimensional microstructures can be fabricated based on these results, which indicates a possibility of industrial application as a novel 3 dimensional micro fabrication process.
