Abstract
In this study, nanometer scale scratch tests of gallium arsenide (GaAs) semiconductor were carried out by using drive mechanism of atomic force microscope (AFM) and its high rigid cantilever with diamond for scratching tests. The relation between generation mechanism of crack and orientation of GaAs crystal was examined to change the direction of scratching for GaAs (100). It was found that the crack was easy to appearance in both direction of [011] and [011], and that the thickness of work-affected layer in the [011] was thicker than other directions.
