Abstract
The material removal mechanisms on the SiO_2-CMP have been studied to develop new slurries and polishing pads for the advanced ULSI devices. We focus on the chemical reacted layer at the surface of SiO_2 film because formation of the layer is effected by pH of the slurry. Relationship between the MRR (Material removal rate) and chemical reacted layer was suggested by the results of the CMP tests and SEM observations at various pH conditions from 7.5 to 12.5. The size of the SiO_2 fine particles increase as the higher pH reason because the surface of the SiO_2 fine particles might be changed during the CMP. In our report, we discuss the material removal mechanism based on the experimental result of the SEM observation on the SiO_2 fine particles.
