MNM-3B-2 WSiとLSI配線工程互換プロセスを用いたモノリシック集積化MEMS圧カセンサ(セッション 3B 情報・精密機器におけるマイクロ・ナノテクノロジー2)
詳細
We have developed back-end-of-line (BEOL) MEMS processes for monolithically integrating MEMS and CMOS-LSI. The processes do not affect the performance of the LSI because only conventional materials for CMOS LSI are used and all process temperatures are less than 450 degree C. A CMOS-LSI-integrated capacitive pressure-sensor was fabricated with a chip size of 0.72 mm^2 using the BEOL MEMS processes. Multi-sensor chip with a size of 1.7 by 1.9 mm^2 which consists of pressure sensor, temperature sensor and high-precision measurement circuits was also fabricated.
