MNM-4A-5 陽極酸化アルミナを用いたナノポーラス熱電半導体の生成(セッション 4A ナノ材料と熱工学)

抄録

A nano-porous thin film of p-type Bismuth-Telluride with an enhanced figure of merit of 1.8 at room temperature was fabricated by flash evaporation on an alumina substrate containing hexagonally arranged nano-pores with an average diameter of 20 nm, separated by an average of 50 nm. The thermal conductivity was significantly reduced compared with standard Bismuth-Telluride films to 0.25 [W/(m・k)] with no major decrease in either the electrical conductivity (398 [S/cm]) or the Seebeck coefficient (198 [μV/K]). The reduction in thermal conductivity was roughly explained using a full distribution model of the phonon mean free path