抄録
In this study, an electret charging method for fabricating energy harvester with SiN/SiO_2 film that is selectively charged by using biased electrodes is demonstrated. Inorganic material of SiN and SiO_2 have high thermal robustness to endure the soldering temperature and the electret charging method by using the biased electrode doesn't require physical patterning of the electret film. Our charging method to SiN/SiO_2 film, a fine patterned electret with highly thermal robustness is obtained.
