抄録
Silicon quantum dots (Si QDs) were fabricated and employed in poly(3-hexylthiophene-2,5-diyl) (P3HT) based organic photovoltaics for further enhancement of solar cell performance. Size controlled, mono-dispersed Si QDs were fabricated from silicon tetrachloride using very high frequency (70 MHz) non-thermal plasma reactor. Chlorine-terminated Si QDs was readily dispersed into specific type of organic solvent to form silicon inks. Si QD thin film was fabricated by solution process and integrated in bulk heterojunction (BHJ) P3HT/SiQD hybrid photovoltaics. Structure of hybrid photovoltaics and their performance in terms of short circuit current (I_<sc>), and open circuit voltage (V_<oc>) is first reported.
