抄録
We have prepared Al doped ZnO (AZO) thin films for thermoelectric application by Pulsed Laser Deposition (PLD) technique on STO substrates at various deposition temperatures (T_<dep>=400C, 500C, 600C). The thermoelectric properties of AZO thin films were studied in temperature range 300 K-600 K. The electrical conductivity was measured as 3×10^3 S/cm at 300 K using four-probe technique. The value of Seebeck coefficient was in the range of -95μV/K〜-244μV/K and Thermal conductivity at 300 K for thin films was 0.12 W/mK〜2.0 W/mK. We report for first time high value of figure of merit 0.54 at 300 K for AZO thin films. The overall thermoelectric performance of AZO this films is strongly enhanced in comparison with bulk pellets.
