抄録
An increase of thermoelectric film thickness is important for thermoelectric film generators to convert thermal energy to electric energy with high efficiency. The aim of this study is to develop a patterning process of thermoelectric thick films. Thermoelectric thick films of Bi_2Te_3 materials were deposited by thermally-assisted sputtering method (TASM) and patterned using lift-off technique. The weight loss of polydimethylsiloxane (PDMS) was as small as 0.5% at 300℃ by thermogravimetry analysis. Therefore, PDMS was used as masks in the lift-off technique because the substrate temperature reached approximately 300℃ in TASM. The PDMS lift-off masks with 100 urn height were formed on the substrates using thick photoresist patterns as molds. After depositing the thick films, PDMS lift-off masks were removed from the substrates in acetone. Bi_2Te_3 thick film patterns with 300 μm width and 30 μm thickness were obtained. This patterning process can be applied to fabricate thermoelectric thick film generators.
