抄録
The present study describes an applicability of fine particle peening to improve yield rate of semi-conductor materials during breaking process. A sapphire wafer and fine alumina beads with 5, 10, 30 μm in diameter were used for the specimen and the impact media. A developed apparatus possible to eject low flow rate was used for the fine particle peening. The crack growth was evaluated with an indentation fracture method using Vickers hardness apparatus. It was found that the increase in the surface roughness resulted in fine particle peening was small. Results of the indentation experiment showed that the radial crack length grown from the impression corner becomes smaller with the application of the fine particle peening and that significant growth of the lateral crack occurred along the boundary of the peened area. Therefore, it is estimated that partial application of the fine particle peening is effective for control the root of the crack pass during the breaking process of semi-conductor materials.
