抄録
In the manufacturing process of silicon semiconductor devices, it is required that a more uniform thin film is deposited on the silicon wafer. When thin film deposition is performed using vertical heating furnace, flow control of the reactant gas across the wafers to enable the deposition of thinner films in addition to temperature control are very important. The research reported here, clarified flow patterns and temperature of the gas on the wafer surface by numerical simulation and measurements on the wafer were carried out by a PIV method with gas flow in a trial reactor.
