Proceedings of thermal engineering conference
Online ISSN : 2433-1317
2002
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Numerical study on the crystal growth of Si/Ge by using FZ method under microgravity fields
Yasunori OKANOHisashi MINAKUCHI
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CONFERENCE PROCEEDINGS FREE ACCESS

Pages 303-304

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Abstract
In order to have better predictions for the FZ growth of Si/Ge crystal under microgravity field, a numerical simulation of the Marangoni convection in a three-dimensional Full-zone configuration was performed. In early stages of the simulation, the flow and temperature fields were still 2-dimensional, and 2 vortexes with the same size existed in the melt. However, the concentration field exhibited a three-dimensional behaviour even the flow and temperature fields were still axisymmetric. As time proceeds, the flow, temperature and concentration fields become three-dimensional. In the case of large Marangoni number, size of the vortexes periodically changed in spite of assumed axisymmetric thermal boundary conditions. It was shown that rotation of the crystal and feed was beneficial in growing axisymetrically uniform crystals.
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© 2002 The Japan Society of Mechanical Engineers
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