Journal of the Society of Materials Engineering for Resources of Japan
Online ISSN : 1884-6610
Print ISSN : 0919-9853
ISSN-L : 0919-9853
p-n Junction prepared by Ceramic Semiconductor and Its Electrical Preoperties
Masashi ITOIShigeki SATOHaruo TAGUCHINoboru YOSHIMURA
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1989 Volume 2 Issue 1 Pages 26-34

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Abstract
Recently, ceramics technology has been developed as electronic parts such as capacitors, PTC, variable resistors and so on. But, there are not so many for the reports related to twodimensional application like p-n junction using ceramic semiconductors.
In this paper, it has been carried out the investigation for the preparation of p-n junction using ceramic semiconductors. The samples were prepared by means of following two methods: (1) p-n junction contacted by spring force using blocks of ceramic semiconductors, and (2) p-n junction of the thick film prepared by coating. We used NiO as P-type, and PTC as N-type. This paper describes a possibility of application to the capacitor for p-n junction prepared by the ceramic semiconductors.
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