抄録
TiO2 and TiO2-SnO2 thin films were prepared by sol-gel method using the metal alkoxides (Ti (O-i-Rr)4, Sn (OEt)4). These films have been successfully prepared in low temperature of about500°C. The electrical properties are semiconductive. A humi: dity sensor with TiO2 and TiO2-SnO2 films was prepared to use at high relative humidity above 60%RH.It is found that a response property of the sensors for the time is very fast between30%RH and90%RH as compared with that for other sensors.
