酸素分圧制御水熱法による高純度ZnO単結晶の育成と評価
1992 年 5 巻 2 号 p. 77-82
詳細
1992 年 5 巻 2 号 p. 77-82
Zinc oxide single crystals of high purity have been grown by hydrothermal method under a partial pressure of oxygen, using a platinum-lined autoclave and ultra-pure reagents. The stoichiometry of grown crystals was investigated by employing coulometric technique to detect a small deviation in the stoichiometric constituent towards Zn1+xO. The concentration of the excess Zn atoms was accurately determined from 0.8 to 1.7 ppm and the electrical resistivity of the as-grown grown crystals measured as of the order of 108Ω-cm.
