Improvement of sensitivity of Si based infrared detector using moth eye structure

Abstract

This paper report a moth eye structure for a Si based photodetector to function in the near infrared region, which prevents reflection and increases the transmittance without disturbing the propagation direction. A structure of moth eye pillars was fabricated on the surface of Si on the premise of deployment to Si based infrared photodetector. The moth eye pillar structure was capable of suppressing diffraction inside the Si suppresses reflection. By fabricating a pillar-type moth-eye structure on Si, reflection at the air - Si interface was suppressed and light could be efficiently introduced into the Si. As a result, the electrical detection value due to the Schottky barrier was increased. It will increase the sensitivity of infrared photodetector.