抄録
Most heat generated in thin film resistor of Power MEMS dissipates into substrate even though it is used to warm the working gas or propellant. In order to reduce such waste of power, high-performance thermal insulator is required to develop between thin film heater and substrate. Silicon dioxide film is treated because of its popularity for MEMS technology and variety of thermal property. In order to inquire the more effective thermal isolation structures suited for Power MEMS, double SiO_2 layers are made up of different process on silicon wafer. Such double layer has two thermal interfaces, which disturb heat transfer. By using the 3 omega method, the thermal conductivity of SiO_2 thin film layers and interfacial resistance are measured. Optimum SiO_2 structure using multiple films suited for Power MEMS especially for micro thruster is proposed and discussed.
