抄録
Silicon melt flow structure during the CZ crystal growth process, which seriously affects the obtained crystal quality, has been investigated numerically. In this study, effect of crucible size as well as temperature distribution along side crucible wall on the silicon natural convection has been considered extensively by using 3D flow simulation code. If the crucible size is increased, the effect of temperature distribution along the side crucible wall is neglected; the melt flow structure becomes completely three-dimensional and time dependent even if the upper wall temperature is decreased. The macroscopic temperature fluctuation can be easily observed through spoke pattern, which generated at the melt free surface.
