Abstract
This paper treats silicon dioxide thin films for effective thermal insulator of PowerMEMS. Two SiO_2 layers with different deposition process on Si substrate are manufactured. This structure has two thermal interfaces, which block up the heat transfer into Si substrate. Thermal conductivity of this SiO_2 layer structure is measured using the 3 omega method. The interfacial thermal resistance of two SiO_2 layers are also obtained. The measurement results are discussed more effective SiO_2 thin film structure is proposed.
