抄録
The reaction mechanism and growth rate of TiN film by thermal chemical vapor deposition has been investigated. Firstly the growth rate increased dramatically with the distance from the heater inlet until almost unform temperature zone. After the zone ,the growth rate decreased exponentially with the distance. From the fact,the coating process could be controlled by mass transfer of the reactant with having the gas phase reaction after the zone.From the analysis,the activation energies for the surface reaction and the gas phase reaction were 88.3 KJ/mol and 26.0 KJ/mol, respectively.
