The Proceedings of the Thermal Engineering Conference
Online ISSN : 2424-290X
2013
Session ID : H112
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H112 Modeling of Transient Thermal Behavior at Microprocessor Hot Spot
Koji NishiTomoyuki HatakeyamaShinji NakagawaMasaru Ishizuka
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Abstract
This paper investigates transient temperature behavior at microprocessor silicon die hot spot. The thermal local resistance is defined as a part of one-dimensional thermal network and is utilized to express microprocessor silicon die hot spot temperature. Transient thermal local resistance is modeled and is evaluated based on and compared to three-dimensional heat conduction simulation result.
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© 2013 The Japan Society of Mechanical Engineers
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