抄録
Growth rate of titanium nitride (TiN) film by thermal chemical vapor deposition (CVD) in horizontal tubular reactor was investigated experimentally for various setting temperature, total gas flow rate and diameter size of the tubular reactor. There were two regions for the growth rate distribution along the axis in the tubular reactor. In the first region, the growth rate could be controlled by the gas phase reaction of TiCl_4. On the other hand, in the second region, the growth rate was found to decrease exponentially with axial position in the reactor and could be controlled by the diffusion rate of TiCl_4.
