熱 CVD 法による TiN 薄膜生成過程の反応速度解析

抄録

In this study, the coating process of TiN film on quartz substrate by thermal chemical vapor deposition has been conducted experimentally. Raw material of TiCl₄ vapor was premixed with excessive nitrogen and hydrogen gases through the glass beads packed bed. The length, inner diameter and porosity of the packed were 2 m, 0.7 mm and 0.609 respectively. There were two regions for the growth rate distribution of TiN film along the axis in the tubular reactor. In the first region, the growth rate increased with temperature at the inner wall. On the other hand, in the second region, the growth rate was found to decrease exponentially with axial position in the reactor and could be controlled by the diffusion rate of TiCl₄. Furthermore, two dimensional numerical simulation of heat and mass transfer during thermal CVD has been also conducted.