Near field radiation control between Metal-Insulator-Metal structured emitter and Metal-Semiconductor-Metal TPV cell

Abstract

Spectral control of near-field radiation transfer from Metal-Insulator-Metal (MIM) structured emitter made of Ni and SiO2 to Metal-Semiconductor-Metal (MSM) structured Thermo-photovoltaic (TPV) cell made of GaSb semiconductor and Au is studied using Finite Difference Time Domain (FDTD) method. As the simulation result, enhancement of near-field thermal radiation flux is observed among near infrared radiation range for GaSb TPV cell, 1.0~1.6μm, mainly by the structure of MIM emitter. In addition, inside of GaSb is partially stimulated by MIM emitter and MSM structures.