階層的ナノピラー構造上での滴状凝縮挙動

抄録

Using reactive ion etching, the fabrication conditions of pillar-structure with nm-class high aspect ratio were investigated on the silicon surface. The condensation behavior on the silicon surface with the nano-pillar structure with high aspect ratio was observed, and the spontaneous jumping phenomenon associated with droplet coalescence was observed. It was confirmed that the spontaneous jump phenomenon occurred on the silicon surface having a hierarchical pillar structure, and the occurrence frequency of the spontaneous jump was changed mainly due to the difference in the nucleation density of the condensed droplets.