Abstract
A high-power resistor is prone to excessive temperature rise and requires proper thermal design and a temperature control based on a transient thermal analysis. To prepare an accurate thermal model, in this work, we attempted to simultaneously identify a parameter calculated by the product of density and specific heat ρgcg and a thermal conductivity λg of glass layer used in the resistor based on the temperature rise measured by using an electrical-pump / optical-probe type thermo-reflectance technique. Specifically, we measured the temperature rise of the glass layer - alumina sample during 1.0×10-6 s to 30×10-3 s under the conditions that the Au thin film deposited on the sample was joule-heated by the rectangular pulse current. At this point, the temperature difference between upper and lower surfaces of the glass layer approaches a constant value. Then the thermophysical properties were determined by matching the temperature rise predicted by the thermal analysis with the thermoreflectance data. The thermophysical properties of the glass layer were measured in good agreement with a reference date obtained by using the steady-state method and the DSC method. This report focuses primarily on the validity of the measured temperature and the analysis method of thermophysical properties.
