738 窒化膜真性応力起因の転位発生に対する二次元・三次元転位動力学シミュレーション

抄録

In semiconductor devices, it is known that electrical failures are caused by the generation of dislocation. However, observation of its behavior is difficult due to its small size. Therefore, dislocation dynamics is useful for investigating the generation and propagation of the dislocation. In this paper, we have developed dislocation dynamics simulator and applied it to the semiconductor device with the stress field associated with the intrinsic stress of silicon-nitride thin film. We can reproduce the dependence of the dislocation generation on temperature by using the 2D simulation, and in addition, on oxygen concentration by using the 3D simulation.