材料
Online ISSN : 1880-7488
Print ISSN : 0514-5163
論文
薄膜エピタキシャル成長プロセスにおけるステップ成長の異方性
國澤 康平山本 昌裕尾方 成信渋谷 陽二
著者情報
ジャーナル フリー

57 巻 (2008) 8 号 p. 780-785

詳細
PDFをダウンロード (560K) 発行機関連絡先
抄録

Anisotropic growth process of two kinds of steps on Al(111) substrates is performed using kinetic Monte Carlo (kMC) method. Employed kMC parameters of activation energy and attempt frequency are estimated by nudged elastic band (NEB) method and transition state theory. Obtained set of results suggest that degree of the anisotropic growth clearly depends on substrate temperature and deposition rate. We find microscopic origin of the anisotropic growth is difference of diffusion rates along {111} and {100} steps, and there is a particular growth condition in which strong anisotropy is observed. At high deposition rate and low temperature, new islands which are easily generated on terraces, hinder the growth anisotropy weaker.

著者関連情報
© 2008 日本材料学会
前の記事 次の記事

閲覧履歴
前身誌

材料試験

feedback
Top