材料
Online ISSN : 1880-7488
Print ISSN : 0514-5163
ISSN-L : 0514-5163
論文
近接積層InAs/GaAs量子ドット半導体光アンプの光導波モード解析
諏訪 雅也大橋 知幸安達 貴哉海津 利行原田 幸弘喜多 隆
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ジャーナル フリー

2015 年 64 巻 9 号 p. 685-689

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We performed modal analysis for 40-stacked InAs/GaAs quantum dot semiconductor optical amplifiers (QDSOAs) as a function of the waveguide width using an equivalent refractive index technique. QDSOAs with 5- and 11-μm-waveguide widths show multi-mode operations. The theoretical simulation reproduced well the experimental electroluminescence spectrum and unveiled that the output signals comprise several transverse modes. Besides, we confirmed a waveguide width less than 1.28 μm is essential to realize single-mode QDSOAs. The modal gain spectra were analyzed by using the Hakki-Paoli method. Multi peaks arisen from the multi-mode operation were also observed in the gain spectrum, suggesting precise control of the transverse mode is important for a practical realization of the single-mode device.
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© 2015 日本材料学会
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