溶液系非真空薄膜作製手法ミストCVDによる二硫化モリブデン(MoS₂)層状薄膜の作製

抄録

Recently, layered transitional metal dichalcogenide (TMD) materials which are bound by vdW forces between the layers have received much attention owing to their excellent properties. In this study, we focused on layered molybdenum disulfide (MoS₂) thin film fabrication by mist CVD. Thin films were fabricated by using a precursor solution containing a mixture of hexaammonium heptamolybdate tetrahydrate ((NH₄)₆Mo₇O₂₄・4H₂O) and thiourea (CH₄N₂S) dissolved in methanol. As a results, raman peaks around 380 cm^-1 (E¹_2g) and 410 cm^-1 (A_1g) were observed from the samples prepared at 300 - 400 °C. Remarkably, the growth temperature of MoS₂ thin-films by mist CVD is comparatively lower temperature than that of the traditional CVD. Furthermore, it was found that high quality MoS₂ on entire substrate was fabricated under the condition of sufficient thermal decomposition time.