ミストデポジション法によるフラーレンの結晶化制御とn型有機トランジスタへの応用

抄録

We discussed on crystallization and crystal length control of fullerene(C60) by mist vapor deposition method and fabrication of n-type organic transistor. It was revealed that these crystallinities were affected by the substrate temperature and the amount of mist supplied. The n-type organic transistors using fullerene crystal were able to operate in the atmospheric condition. The electron mobility was estimated to be 7.36×10^-6 [cm²/Vs]. Furthermore, the transistor characteristics have been improved by applying HMDS treatment and annealing processing. In particular, the HMDS treatment caused crystals to precipitate between the source and drain electrodes.