擬コッセル線による結晶方位の決定法

抄録

The diffraction patterns obtained by the back reflection divergent X-ray method are analogous to the well known Kossel patterns, in which each ellipse consisting of Kα₁ and Kα₂ lines corresponds to the definite set of (hkl) planes. Crystallographic orientation may be determined rapidly and exactly with these pseudo Kossel patterns compared with the ordinary X-ray technique.
The diffraction line is indexed by measuring the following Parameters; (1) the distance between the doublet on the film and the two consecutive film positions in the multiple exposure technique; (2) the length of the major or the minor axis in an ellipse and the specimen-to-target and the targetto-film distances.
The crystallographic orientation of a specimen can be determined to an accuracy of the order of 0.01° by measuring the parameters of more than two sets of (hkl) planes.