抄録
Oxygen diffusion in polycrystalline ZnO particles has been measured by the solid-gas isotope exchange technique using O18 as a tracer at temperatures in the range 689-1290°C. A new method of calculating the volume diffusion from the exchange data of particles was developed, and the plausibility was discussed experimentally. The oxygen diffusion in ZnO was characterized by three regions having the activation energies of 22.1, 63.2 and 172.7 kcal/mol. On the basis of the results, it is suggested that the origin of semiconducting behavior of ZnO is due to the electrons trapped around oxygen vacancies created at elevated temperatures.
