抄録
In X-ray stress measurement of a single crystal, the control of crystal oscillation is required in order to obtain a perfect diffraction profile. Accurate diffraction profiles can be measured by using the χψ-oscillation method proposed in this study. The elasticity applied stresses in a silicon single crystal used as a material of semiconductor devices was measured using this oscillation method. Lattice strain was obtained from the peak shift of the diffraction profiles. The stress was calculated using the lattice strain of three different diffraction planes. As a result, the measured stress agreed well with the applied stress evaluated using the strain gage. Therefore, the possibility of X-ray stress measurement of a single crystal using the χψ-oscillation method was confirmed. Also, the relationship between the displacement error of the specimens and the stress error was theoretically examined. It was confirmed that the effect of misalignment on X-ray stress measurement of single crystal materials is much larger than in the case of polycrystalline materials. In this study, a microscope was used in order to set the specimen.
