Developments of Basic Researches on Fluorocarbon Plasmas for Material Processing 6.Surface Reaction Process of Fluorocarbon Radicals (CFx)

Abstract

Surface reaction process of fluorocarbon radicals (CF_x) in the contact hole etching for ultra-large-integrated circuits (ULSIs) is presented. When H₂ is added to fluorocarbon gases, the surface reactions of CF and CF₂ radicals are intensively reported. CF₂ radicals contribute considerably to the fluorocarbon film deposition under plasma irradiations. The behaviours of CF radical densities in the plasma over the film composition on the chamber walls are investigated.