Present Status and Future of EUV (Extreme Ultra Violet) Light Source Research 2.EUV Lithography and Exposure Tool

Abstract

The resolution limit of conventional optical lithography is thought to be around 70 nm. EUV lithography using EUV radiation with a wavelength region of 10 to 14 nm can break through this limitation and can achieve a resolution of below 50 nm. EUV employs reflection-type optics involving multilayer mirrors. Wafers are exposed in a vacuum and reflection-type masks are used. Chemically amplified photoresist materials used for KrF lithography can be applied to EUV lithography. The required EUV power from an EUV source for a throughput of over 100 wph is estimated to be about 80 to 120 W.