抄録
The resolution limit of conventional optical lithography is thought to be around 70 nm. EUV lithography using EUV radiation with a wavelength region of 10 to 14 nm can break through this limitation and can achieve a resolution of below 50 nm. EUV employs reflection-type optics involving multilayer mirrors. Wafers are exposed in a vacuum and reflection-type masks are used. Chemically amplified photoresist materials used for KrF lithography can be applied to EUV lithography. The required EUV power from an EUV source for a throughput of over 100 wph is estimated to be about 80 to 120 W.
