抄録
A new matrix-type semiconductor x-ray detector was developed for the purpose of the measurements of temporally and spatially resolved electron temperatures (Te) during a single plasma shot. This detector is fabricated using precise formation of thin dead layers (SiO2) of six different thicknesses aligned compactly on its surface. Each ”row” has seven channels for the measurements of plasma x-ray radial profiles so as to make x-ray tomographic reconstructions. These various SiO2 layers are proposed to be utilized as ultrathin ”x-ray absorption filters”. This novel idea enables us to analyze x-ray tomography data including the Te region down to a few tens eV. The comparison of tomographically reconstructed data from the respective detector rows provides the temporal evolution of energy-resolved x-ray or Te profiles using ” the absorption method ”. Observations of internal core plasma structural behavior during the magnetohydrodynamic (MHD) destabilization are carried out by the use of a matrix-type semiconductor detector. Furthermore, a method is proposed for obtaining radial profiles of plasma temperatures of both plasma ions and electrons simultaneously.
