Development of a Gas Jet-Type Z-Pinch EUV Light Source for Next-Generation Lithography

抄録

A new gas jet-type Z-pinch EUV light source having double gas jet electrodes has been developed. It has two nozzles and two diffusers. A xenon Z-pinch plasma that emits EUV light is produced between the inner nozzle and the corresponding diffuser. A cylindrical shell consisting of a He gas curtain produced by the outer nozzle is specially designed for shielding the debris and suppressing the inner gas expansion. We have succeeded in generating EUV energy of 1.22 mJ/sr/pulse (2% in-band at 13.5 nm) and EUV emitting plasma of 0.07 mm FWHM diameter and 0.34 mm FWHM length by using this He gas curtain.