抄録
The objective of this study is to consider candidate materials for Cu-Cu direct bonding as advanced interconnect technology using Nanoporous Cu materials. Nanoporous Cu structure can be obtained by two kinds of electroplating process. One is the direct porous plating process by additive which can form Nanoporous structure directly. The other is de-alloying process which can form Nanoporous structure by de-alloying of Cu-X alloy. By using electroplated Nanoporous Cu structure, we compared the property of Nanoporous structure and carried out the bonding test. Nanoporous structure shows higher bonding strength because of its unique properties. The possibility that Nanoporous Cu is promising materials for advanced bonding technology was confirmed.
