Hyomen Kagaku
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
Special Issue on Nitride Semiconductor Surfaces
Atomic Structures of GaN(0001) Reconstructed Surfaces
—Approach Using First-Principles Simulation and STM Measurement—
Takahisa OHNOQi-Kun XUEToshio SAKURAI
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JOURNAL FREE ACCESS

2000 Volume 21 Issue 3 Pages 134-141

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Abstract
Atomic structures of Ga-polar GaN(0001) reconstructed surfaces have been investigated by using first-principles total energy calculations as well as scanning tunneling microscopy measurements. It is found that the 2×2, 4×4, and 5×5 reconstructed structures of Ga-polar GaN(0001) surfaces consist of Ga adatoms adsorbed on the Ga-terminated surface bilayer.
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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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