Surface Processing of SiC and Relations with the Electrical Properties

Abstract

We made an off-axis surface of SiC with the chemical-mechanical polishing (CMP) method to examine the influence of an atomic step on the electronic properties. It became clear that processing pressure had the threshold in the electric field that let the removal of the atom accelerate using the abrasive of the piezoelectric particles. The electric charge distribution of the SiC surface affects the removal rate of SiC. The conductive atomic force microscopy (CAFM) method is effective technique to examine processing mechanism of the materials surface.