Hyomen Kagaku
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
Mechanism of Thin Film Formation by Sputtering in Transition Metals
Kazufumi WATABEToshio SUGITA
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1994 Volume 15 Issue 4 Pages 260-267

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Abstract
Using a PIG-type micro-sputtering apparatus developed by the authors, thin films of 18 different transition metals are deposited on glass substrates under the same sputtering conditions and the deposition rate of each metal is measured in Ar or Xe atmosphere. The relation between the deposition rate measured and the atomic number for each element in 4, 5 and 6 of the periodic systems is shown. A correlation was found between the measured rates and the reciprocals of the cohesive energy of the target metals. Further it was found that, for each metal, the specific deposition rate(Rs) obtained by reference to the rate for Mn is proportional to the specific theoretical sputtering yield(Ys) calculated by Sigmund. These results give an experimental proof to Sigmund's theory which has not been supported by experimentally so far. The authors propose a method as to how to estimate the deposition rate using sputtering yield(Y) calculated by Sigmund theory. The deposition rates for Ir, Os and Rh etc. are estimated by the authors from Sigmund's values.
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© The Surface Science Society of Japan
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