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Volume 15, Issue 4
Displaying 1-11 of 11 articles from this issue
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Hisayoshi KOBAYASHI1994 Volume 15 Issue 4 Pages 198-203
Published: June 01, 1994
Released on J-STAGE: February 05, 2010
JOURNAL FREE ACCESS -
Hiroshi Katayama-YOSHIDA, Nozomi ORITA, Taizo SASAKI1994 Volume 15 Issue 4 Pages 204-210
Published: June 01, 1994
Released on J-STAGE: February 05, 2010
JOURNAL FREE ACCESS -
Koh WADA, Hirokazu OHMI1994 Volume 15 Issue 4 Pages 211-216
Published: June 01, 1994
Released on J-STAGE: August 07, 2009
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Sigeo IHARA1994 Volume 15 Issue 4 Pages 217-223
Published: June 01, 1994
Released on J-STAGE: August 07, 2009
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Akira ISHII1994 Volume 15 Issue 4 Pages 224-232
Published: June 01, 1994
Released on J-STAGE: February 05, 2010
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Modeling of Transport Phenomena and Chemical ReactionsNobuyuki IMAISHI, Yasunobu AKIYAMA1994 Volume 15 Issue 4 Pages 233-239
Published: June 01, 1994
Released on J-STAGE: February 05, 2010
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Noriko AKUTSU, Yasuhiro AKUTSU, Takao YAMAMOTO1994 Volume 15 Issue 4 Pages 240-246
Published: June 01, 1994
Released on J-STAGE: February 05, 2010
JOURNAL FREE ACCESS -
Using Computer Graphics, 3-D Model and Virtual RealityMasahiro KOBAYASHI, Toyomi FUJINO, Tsuyoshi KANEKO, Hiroaki CHIYOKURA, ...1994 Volume 15 Issue 4 Pages 247-251
Published: June 01, 1994
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESS -
Chikara ONODERA, Tsunemasa TAGUCHI1994 Volume 15 Issue 4 Pages 252-259
Published: June 01, 1994
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSThe conduction- and valence-bands offsets and the quantized energy levels of the quantum wells of CdZnSe/ZnSSe strained-layer superlattices have been calculated theoretically on an assumption of free-standing hetero-interface. From this study made with a view to understanding the fundamental electronic states, it was found that the states are greatly dependent upon the well-layer thickness. It was also revealed that the strains induced at the interface significantly modify the band lineups and associated electronic states. These results provide us with some useful information for designing the blue-green laser diodes based on this strained-layer system.View full abstractDownload PDF (869K) -
Kazufumi WATABE, Toshio SUGITA1994 Volume 15 Issue 4 Pages 260-267
Published: June 01, 1994
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSUsing a PIG-type micro-sputtering apparatus developed by the authors, thin films of 18 different transition metals are deposited on glass substrates under the same sputtering conditions and the deposition rate of each metal is measured in Ar or Xe atmosphere. The relation between the deposition rate measured and the atomic number for each element in 4, 5 and 6 of the periodic systems is shown. A correlation was found between the measured rates and the reciprocals of the cohesive energy of the target metals. Further it was found that, for each metal, the specific deposition rate(Rs) obtained by reference to the rate for Mn is proportional to the specific theoretical sputtering yield(Ys) calculated by Sigmund. These results give an experimental proof to Sigmund's theory which has not been supported by experimentally so far. The authors propose a method as to how to estimate the deposition rate using sputtering yield(Y) calculated by Sigmund theory. The deposition rates for Ir, Os and Rh etc. are estimated by the authors from Sigmund's values.View full abstractDownload PDF (3023K) -
Suchan LEE, Hitosi TAMURA, Masahiko INOUE, Ryuichi SHIMIZU1994 Volume 15 Issue 4 Pages 268-272
Published: June 01, 1994
Released on J-STAGE: August 07, 2009
JOURNAL FREE ACCESSSurface chemical analysis of Zr-O/W system was performed at two different sample temperatures, room temperature and ∼1600 K, by using Auger electron spectroscopy (AES) and ion scattering spectroscopy (ISS). Depositing Zr onto a polycrystalline W-substrate the surface was exposed to oxygen. AES and ISS measurements have revealed that the oxygen adsorbed on the Zr/W surface at room temperature diffuses into Zr/W at ∼1600 K, keeping a major part of Zr remained on the outermost atomic layer. This result strongly supports the model proposed by Danielson and Swanson for Zr-O/W (100) system that the oxygen adsorbed on the Zr/W (100) surface at room temperature diffuses into the Zr/W (100) as a composite Zr-O at high temperature and this results in considerable decrease of work function, leading the Zr-0/W (100) system to an electron source of high brightness.View full abstractDownload PDF (541K)
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