Rovibrational State Distribution of SiO Desorbed from a Silicon Surfaceduring O₂ Molecular Beam Scattering

Abstract

Rovibrational state distributions of SiO desorbed from a Si(111) surface during O₂ molecular beam scattering at 1250±50K are studied using resonance enhanced multiphoton ionization mass spectroscopy. Results show that the vibrational temperature is comparable with the surface temperature but the rotational temperature is lower than that.