Abstract
A review is made of angle-resolved electron spectroscopy wherein measurements are made of electrons scattered inelastically from a primary electron beam. The subject includes angle-resolved secondary emission spectroscopy and angle-resolved electron energy loss spectroscopy (AR-ELS). Electron reflection measurements are also discussed. These provide information equivalent to that obtained by angle-resolved secondary emission spectroscopy. Abruptness of an interface between an epitaxial overlayer and a single-crystal substrate can be observed in detail by the reflection measurements. Recent AR-ELS results from structure-sensitive surface-electronic structures on clean. Ag-deposited Si (111) surfaces are described.
